preliminary gan hybrid power ampli fier tg2 00 0 - 10 korea n facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facilities : 919 - 6 77 - 8780 / sales@rfhicusa.com 1 / 6 version 0. 6 product features application s ? gan on sic hemt ? in/out impedance matching ? surface mount hybrid type ? small size & weight ? high efficiency ? low cost ? custom design available ? radio system ? trs(trunked radio system) ? rf sub - systems ? base stati on description tg2000 - 10 have a high performance from 100 to 2000mhz. it has developed for radio and trs applications. because using gan - hemt and aln - board, it s effective for thermal problems. this tg2000 - 10 is designed using psat of 10w. and adding 220nh of inductor to drain bias network, this is used at the lower frequency of 20mhz. electrical specification s @ v ds = 28 v, v gs @i dq , t a =25 p arameter u nit min typ max condition frequency range mhz 2 0 0 - 2 00 0 z s = zl = 50 ohm power gain @ p1db db 10 1 2 - vds = + 28v vgs@i dq idq = 20 ma gain flatness - 1. 0 - input return loss - 5 - 10 - p 1db db m 37 3 8 - p 3 db - 40 - efficiency @ p3db % 30 5 0 - ids @ p3db ma - 55 0 - load mismatch - - 5:1 - a ll load phase supply v oltage v - v gs @i dq - v g s - 2 8 - v d s caution the drain voltage must be supplied to the device after the gate voltage is supplied turn on : turn on the gate voltage supply and last turn on the drain voltage supplies turn off : turn off the drain voltage and last turn off the gate v oltage n ote tg series have internal dc blocking capacitors at the rf input and output ports package type : np - 18
preliminary gan hybrid power ampli fier tg2 00 0 - 10 korea n facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facilities : 919 - 6 77 - 8780 / sales@rfhicusa.com 2 / 6 version 0. 6 mechanical specifications parameter u nit t yp remark mass g 1 - dimension mm 15 x 1 0 x 5 .4 outermost absolute maximum ratings parameter u nit r ating s ymbol gate - source voltage v - 10 ~ 0 vgs drain - source voltage v 5 0 v ds gate current m a 3.6 i g operating junction temperature c 225 t j operating case temperature c - 4 0 ~ 85 t c storage temperature c - 40 ~ 1 00 t stg operating v oltages parameter u nit m in t yp m ax s ymbol drain voltage v - +28 - v ds gate voltage (on - sta t e) v - v gs @i dq - 2 v gs gate voltage (off - sta t e) v - - 8 - v gs block diagram input matching circuit output matching circuit input output 390 1nf 1uf input matching circuit output matching circuit input matching circuit output matching circuit input output 390 1nf 1uf +vds - vgs input matching circuit out put matching circuit input output - vgs +vds 200mhz~20 00mhz 3 0mhz~2000mhz
preliminary gan hybrid power ampli fier tg2 00 0 - 10 korea n facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facilities : 919 - 6 77 - 8780 / sales@rfhicusa.com 3 / 6 version 0. 6 p erformance charts * bias condition @ idq =20 ma, v gs @i dq , vds =+ 28 v, ta=2 5 ids vs. frequency (@p1db) efficiency vs. frequency (@p1db) power gain vs. frequency (@p1db) pin vs. frequency (@p1db) p1db & ids vs. frequency (under 200mhz) gain & efficiency vs. frequency @p1db (under 200mhz)
preliminary gan hybrid power ampli fier tg2 00 0 - 10 korea n facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facilities : 919 - 6 77 - 8780 / sales@rfhicusa.com 4 / 6 version 0. 6 package dimensions (type: np - 18 ) * u nit: mm[inch] | tolerance: 0.15[.006] top view side view bottom view pin description pin no function pin n o function pin no function pin no function 1 rf input 3 gate bias ( - v gs ) 5 gnd 7 gnd 2 gnd 4 drain bias (+v ds ) 6 rf output 8 gnd recommended pattern recommended mounting configuration * mounting configuration notes 1. for the proper performance of the device, ground / thermal via holes must be designed to remove heat. 2. to properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. we recommend the mounting screws be added near the heatsink to mount the board 3 . in designing the necessary rf trace, width will depend upon the pcb material and construction. 4. use 1 oz. copper minimum thickness for the heatsink. 5. do not put solder mask on the backside of the pcb in the region where the board contacts the heatsi nk 6. we recommend adding as much copper as possible to inner and outer layers near the part to ensure opt imal thermal performance.
preliminary gan hybrid power ampli fier tg2 00 0 - 10 korea n facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facilities : 919 - 6 77 - 8780 / sales@rfhicusa.com 5 / 6 version 0. 6 precautions this product is a gallium nitride transistor. the gallium nitride transistor requires a negative voltage bias which operates alongside a positive voltage bias. these biases are applied in accordance to the sequence during turn - on and turn - off. the pallet amplifier does not have a built - in bias sequence circuit. therefore, users need to either apply positive volta ges and negative voltages in the required sequence, or add an external bias circuit to this amplifier. the required sequence for power supply is as follows. during turn - on 1. connect gnd. 2. apply vgs . 3. apply vds . 4. apply the rf power. during turn - off 1. turn off rf power. 2. turn off vds , and then, turn off the vgs . 3. remove all connections. turn on - sequence timing diagram -
preliminary gan hybrid power ampli fier tg2 00 0 - 10 korea n facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facilities : 919 - 6 77 - 8780 / sales@rfhicusa.com 6 / 6 version 0. 6 reflow p rofile * reflow oven settings zone a b c d e f temperature( c) 30 ~ 150 150 ~ 180 180 ~ 220 220 ~ 220 235 ~ 240 2 ~ 6 / sec drop belt speed 55 ~ 115 sec 55 ~ 75 sec 30 ~ 50 sec 30 ~ 50 sec 5 ~ 10 sec 60 ~ 90 sec * measured reflow profile ordering information part number package design tg 2 00 0 - 10 - r (reel) - b (bulk) - evb (evaluation board) revision history part number release date version modification data sheet status tg2000 - 10 2014.06.26 0.6 ? a mass of mechanical specification is changed. preliminary tg2000 - 10 2012.12.28 0.5 ? specifications of absolute maximum ratings and op erating voltages are changed. preliminary tg2000 - 10 2012.11.08 0.4 ? idq of test condition is changed to 20ma. ? solderability characteristic information is supplemented. preliminary rfhic corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. while product specifications have b een thoroughly examined for reliability, rfhic corporation strongly recommends buyers to verify that the information they are using is accurate before order ing. rfhic corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, inc luding without limitation consequential or incidental damages. rfhic products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, prot ect and h old rfhic corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorize d use. sales, inquiries and support should be directed to the local authorized geographic distributor for rfhic corporation. for customers in the us, please contact the us sales t eam at 919 - 6 77 - 8780 . for all other inquiries, please contact the international sales team at 82 - 31 - 250 - 5078.
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